IPP013N04NF2SAKMA1

Single FETs, MOSFETs Overview

The IPP013N04NF2SAKMA1 is a StrongIRFET™2 N-channel power transistor with a 40 V drain-source breakdown voltage. It features a maximum on-state resistance of 1.3 mΩ and supports a continuous drain current of 198 A at 25 °C. The device utilizes a PG-TO220-3 package, offering a thermal resistance from junction to case of 0.51 °C/W. Key dynamic parameters include a total gate charge of 159 nC and an output capacitance of 4130 pF.

Single FETs, MOSFETs Feature Summary

• StrongIRFET™2 technology optimized for wide application ranges
• 100% avalanche tested for enhanced ruggedness
• Lead-free plating compliant with RoHS standards

Single FETs, MOSFETs Applications

• Power supply units
• AC-DC power conversion
• Low-voltage drives

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering code suffix against Infineon documentation to confirm specific tape-and-reel or tube packaging variants. Confirm JEDEC qualification status and material content declarations prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and high current handling in a through-hole format. Evaluate thermal management requirements based on the specified junction-to-case resistance and ensure PCB copper area meets the 6 cm² recommendation for optimal heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET™2 family, designed for general-purpose switching applications. It serves as a robust alternative to standard MOSFETs by providing improved avalanche energy capabilities and lower on-resistance within the 40 V voltage class.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IPP013N04NF2S for identical electrical specifications. Verify pinout compatibility and thermal characteristics when substituting into existing designs.