IPZ60R037P7XKSA1

Single FETs, MOSFETs Overview

The IPZ60R037P7XKSA1 is a single N-channel CoolMOS P7 power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and features a TO-247-4 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V, a continuous drain current (Id) of 76 A, and a maximum on-resistance (Rds(on)) of 30 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and has a gate charge (Qg) of 121 nC. It supports an enhancement mode operation with a threshold voltage of 3 V, a power dissipation rating of 255 W, and a temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Integrates CoolMOS P7 technology for optimized switching performance and low conduction losses in high-voltage applications.

Single FETs, MOSFETs Applications

• High-efficiency power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and tape-and-reel or tube packaging details. Ensure compatibility with thermal management requirements given the 255 W dissipation rating. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rated N-channel MOSFET with low on-resistance is required for through-hole mounting. The TO-247-4 package provides robust thermal handling capabilities suitable for high-current applications up to 76 A. Consider the 121 nC gate charge for driver capability assessment in switching frequency designs.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS P7 family, designed for high-performance power switching. It represents an evolution in silicon MOSFET technology, offering improved figure-of-merit compared to standard planar devices. The product line targets demanding industrial and consumer applications requiring high efficiency and reliability.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic replacements may differ in Rds(on), Qg, or thermal characteristics. Do not assume pinout compatibility without verifying the specific package variant and datasheet specifications.