Single FETs, MOSFETs IRF3315STRL product image

IRF3315STRL

$1.19
  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:882d90783925 Category: Brand:

  
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IRF3315STRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 21A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF3315STRL

  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:82mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 94W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF3315STRL

IRF3315STRL

Single FETs, MOSFETs Overview

The IRF3315STRL is a single N-channel enhancement-mode power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a D2PAK (TO-263) surface-mount package with three pins. The device supports a maximum drain-source voltage of 150 V and a continuous drain current of 21 A at case temperature. Key electrical parameters include a maximum on-resistance of 82 mΩ at 10 V gate drive, a typical gate charge of 95 nC at 10 V, and a maximum power dissipation of 94 W at case temperature. The component operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode operation for standard switching applications
  • HEXFET technology providing low on-resistance characteristics
  • D2PAK surface-mount package design for efficient thermal management

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power switching modules
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official Infineon documentation to ensure compatibility with the required specifications. Confirm that the D2PAK package dimensions align with the target PCB layout. Check for any specific handling requirements related to the surface-mount assembly process. Ensure compliance with applicable environmental standards before integration into the final product design.

Single FETs, MOSFETs Selection Notes

Select this component based on the requirement for a 150 V rated N-channel MOSFET in a D2PAK package. Evaluate the 82 mΩ on-resistance against the expected load current to manage conduction losses. Consider the 94 W power dissipation capability relative to the available heatsinking or PCB copper area. Verify that the gate charge characteristics suit the driving circuit's speed requirements.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs produced by Infineon Technologies. The HEXFET series utilizes trench technology to achieve high performance in power switching applications. The IRF3315 variant specifically targets medium-voltage applications requiring robust current handling capabilities in a compact surface-mount form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference pinouts and electrical ratings when considering alternatives.

IRF3315STRLIRF3315STRL
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