IRF6607

Single FETs, MOSFETs Overview

The IRF6607 is a single N-channel HEXFET power MOSFET utilizing DirectFET packaging. It features a maximum drain-to-source voltage of 30 V and an on-state resistance of 3.3 mΩ at 10 V gate drive, or 4.4 mΩ at 4.5 V. The device supports a continuous drain current of 27 A at case temperature of 25°C and handles a pulsed current of 220 A. Total gate charge is typically 50 nC. Thermal performance includes a junction-to-case resistance of 3.0 °C/W and a junction-to-PCB resistance of 1.0 °C/W. Operating temperatures range from -40 to +150 °C.

Single FETs, MOSFETs Feature Summary

• Combines advanced silicon technology with DirectFET packaging for low profile and dual-sided cooling compatibility.
• Optimized for synchronous buck converters with high Cdv/dt immunity to prevent false turn-on.
• Balances low conduction losses with reduced total gate charge for high efficiency DC-DC conversion.

Single FETs, MOSFETs Applications

• CPU core DC-DC converters
• Synchronous rectification in power supplies
• High frequency switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant and tape/reel specifications. Confirm that the component meets the required thermal management design for the intended application environment. Check for any recent product qualification updates or lifecycle status changes directly from Infineon resources before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact footprint with SO-8 dimensions but enhanced thermal dissipation capabilities. Ensure the gate driver can support the specified threshold voltage range and provides adequate current for the 50 nC gate charge. Evaluate the system's thermal budget to utilize the dual-sided cooling potential inherent to the DirectFET structure effectively.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family integrated with DirectFET packaging technology. It is designed to replace traditional surface mount packages by offering superior thermal transfer while maintaining standard layout geometries. The technology focuses on minimizing both conduction and switching losses for modern processor power delivery systems.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30 V rating, DirectFET package outline, and thermal characteristics. Verify that alternative devices maintain similar Cdv/dt immunity levels for synchronous applications.

Single FETs, MOSFETs FAQ

What is the primary advantage of the DirectFET package over standard SO-8?

The DirectFET package allows for dual-sided cooling, improving thermal resistance by up to 80% compared to previous bests, while maintaining the same footprint.

How does the IRF6607 handle Cdv/dt induced turn-on?

It offers particularly high Cdv/dt immunity, which is critical for synchronous FET applications to prevent shoot-through currents caused by capacitive coupling during switching transitions.