IRF740S

$2.52

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:823af9d6eaea Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF740S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 10A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF740S

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF740S

IRF740S

Single FETs, MOSFETs Overview

The IRF740S is a third-generation N-channel power MOSFET manufactured by Vishay Siliconix, designed for surface-mount applications in the D2PAK (TO-263) package. It features a drain-source voltage rating of 400 V and a continuous drain current of 10 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.55 Ω at VGS = 10 V and a total gate charge of 63 nC. Key electrical characteristics include a threshold voltage range of 2.0 to 4.0 V, an input capacitance of 1400 pF, and a peak diode recovery dv/dt rating of 4.0 V/ns. The component supports repetitive avalanche energy up to 520 mJ and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Surface-mount construction in D2PAK (TO-263) package with tape and reel availability
Ruggedized design featuring dynamic dV/dt rating and repetitive avalanche capability
Optimized for fast switching performance with low gate charge requirements
Facilitates ease of paralleling and simple drive requirements

Single FETs, MOSFETs Applications

High-frequency DC-to-AC inverters
PWM motor control systems
High-efficiency power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status, as the datasheet distinguishes between lead-free/halogen-free and leaded terminations. Confirm that the D2PAK (TO-263) package orientation matches the target PCB footprint. Ensure thermal management strategies account for the linear derating factor when operating above 25 °C case temperature. Validate that the selected variant meets all RoHS or REACH regulatory requirements applicable to the final assembly region.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability combined with surface-mount convenience. The D2PAK package offers superior power dissipation compared to standard SMD packages while maintaining lower on-resistance than through-hole alternatives. Consider the 10 A continuous current limit and the need for adequate heatsinking to maintain case temperatures below 100 °C for optimal performance. Evaluate the 0.55 Ω on-resistance against system conduction loss requirements.

Single FETs, MOSFETs Part Context

The IRF740S belongs to the HEXFET® Power MOSFET family from Vishay Siliconix, representing third-generation technology. This series integrates advanced cell architecture to balance low on-resistance with fast switching speeds. The D2PAK (TO-263) package is specifically engineered to accommodate larger die sizes, providing higher power handling capabilities than smaller surface-mount options. The product line is widely recognized for cost-effectiveness and reliability in industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

IRF740SPbF

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for a single pulse avalanche energy of 520 mJ and a repetitive avalanche energy of 13 mJ.

How does the package support high-current applications?

The D2PAK (TO-263) package provides low internal connection resistance and a large thermal pad, enabling it to dissipate up to 125 W at 25 °C case temperature.