IRF7524D1GTRPBF

Description：MOSFET P-CH 20V 1.7A 8USMD
Series：FETKY™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:93f9072ce900 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7524D1GTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 1.7A 8USMD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7524D1GTRPBF

Description：MOSFET P-CH 20V 1.7A 8USMD
Series：FETKY™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：270mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：240 pF @ 15 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-uSMD
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7524D1GTRPBF

IRF7524D1GTRPBF

Single FETs, MOSFETs Overview

The IRF7524D1GTRPBF is a co-packaged P-Channel HEXFET MOSFET and low forward voltage Schottky diode utilizing Generation 5 technology. It features a Micro8 footprint with a drain-source breakdown voltage of -20V, an on-resistance of 0.27Ω at VGS=-4.5V, and a Schottky forward voltage of 0.39V. The device supports a continuous drain current of -1.7A and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Co-packaged HEXFET MOSFET and Schottky diode for board space saving
Generation 5 technology for extremely low on-resistance per silicon area
Micro8 package with half the footprint area of standard SO-8

Single FETs, MOSFETs Applications

Switching regulator applications
Portable electronics such as cell phones and PDAs
PCMCIA cards and thin application environments

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official documentation to confirm lead-free and halogen-free status. Confirm that the Micro8 package outline conforms to EIA-481 and EIA-541 standards. Ensure thermal management accounts for the junction-to-ambient thermal resistance rating when mounted on typical multi-layer PCBs.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring minimal PCB footprint in portable devices. The integrated Schottky diode eliminates the need for external rectification, simplifying the circuit layout. Evaluate the -20V breakdown voltage and 0.27Ω on-resistance to ensure compatibility with the target switching regulator's voltage and current requirements.

Single FETs, MOSFETs Part Context

This part belongs to the FETKY family of co-packaged power MOSFETs and Schottky diodes. The Micro8 package provides the smallest footprint available in an SOIC outline, making it suitable for applications where printed circuit board space is at a premium. The low profile allows integration into extremely thin electronic environments.