IRF7807A

Single FETs, MOSFETs Overview

The IRF7807A is a single N-channel HEXFET power MOSFET in an SO-8 surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 8.3 A at 25°C, dropping to 6.6 A at 70°C. The device has a maximum on-resistance of 25 mΩ at VGS = 4.5 V and a total gate charge of 17 nC at VGS = 5 V. Power dissipation is rated at 2.5 W at 25°C and 1.6 W at 70°C. The junction temperature range spans from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Advanced HEXFET technology balances low conduction losses with reduced switching losses for high efficiency.
• Optimized for mobile DC-DC converters powering microprocessors at system voltages such as 3.3V and 5V.
• Suitable for use as both control FETs and synchronous FETs in paired configurations.

Single FETs, MOSFETs Applications

• Mobile PC DC-DC converters
• 3.3V and 5V power supply systems
• High-efficiency microprocessor power stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through authorized distributors or manufacturer certificates before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low RDS(on) and minimal gate charge in compact SO-8 packages. Evaluate thermal resistance requirements carefully, as the 50 K/W junction-to-ambient rating limits power handling without adequate PCB copper area.

Single FETs, MOSFETs Part Context

Part of the HEXFET family designed for balancing on-resistance and gate charge. Specifically engineered for cost-effective performance in mobile computing power architectures where space and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

IRF7807PBF serves as a direct equivalent within the same product line. Verify that any substitute maintains identical SO-8 footprint and matches the 30V/8.3A specifications for seamless integration.

Single FETs, MOSFETs FAQ

What is the significance of Qgs2 in the IRF7807A?

Qgs2 represents the gate charge supplied between reaching threshold voltage and peak drain current. Minimizing this value reduces switching losses in the control FET during turn-on.

How does Qoss impact circuit performance?

Qoss is the output charge transferred to the drain capacitance. It generates losses transferred to the control FET and increases overall dissipation in the converter stage.