IRF8306MTRPBF

$1.32

Description：MOSFET N-CH 30V 23A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk

SKU:5e44cf5e3028 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF8306MTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 23A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF8306MTRPBF

Description：MOSFET N-CH 30V 23A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id：2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4110 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：2.1W (Ta), 75W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DIRECTFET™ MX
Package / Case：DirectFET™ Isometric MX

Single FETs, MOSFETs datasheet and documents for IRF8306MTRPBF

IRF8306MTRPBF

Single FETs, MOSFETs Overview

The IRF8306MTRPBF is a HEXFET power MOSFET with an integrated monolithic Schottky diode, housed in a DirectFET MX package. It features a drain-to-source voltage of 30V and a continuous drain current of 23A at 25°C case temperature. The device exhibits a maximum on-resistance of 1.8mΩ at VGS=10V and 2.8mΩ at VGS=4.5V. Total gate charge is typically 25nC. Operating junction temperatures range from -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

Combines advanced HEXFET silicon technology with DirectFET packaging for low profile and footprint compatibility.
Integrates a monolithic Schottky diode to minimize reverse recovery charge and switching losses.
Features ultra-low package inductance to reduce conduction and switching losses during high-frequency operation.

Single FETs, MOSFETs Applications

High frequency DC-DC converters
CPU core power supplies
Synchronous buck converter sync FET sockets

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the reel quantity and tape configuration. Confirm that the component meets RoHS compliance standards and lead-free requirements as specified by the manufacturer. Ensure the selected variant matches the required moisture sensitivity level and industrial qualification ratings for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing both conduction and switching losses is critical for system efficiency. The integrated Schottky diode makes it suitable for synchronous rectification applications where body diode reverse recovery characteristics are limiting factors. Consider the thermal performance benefits of dual-sided cooling capabilities inherent to the DirectFET package design.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family utilizing DirectFET packaging technology. It is designed to balance industry-leading on-state resistance with minimized gate charge. The package allows for compatibility with existing surface mount assembly equipment and standard soldering techniques used in power electronics manufacturing.