Single FETs, MOSFETs IRF8308MTRPBF product image

IRF8308MTRPBF

  • Description:MOSFET N-CH 30V 27A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:25cfe2d663b0 Category: Brand:

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IRF8308MTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 27A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF8308MTRPBF

  • Description:MOSFET N-CH 30V 27A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:27A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id:2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4404 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.8W (Ta), 89W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET™ MX
  • Package / Case:DirectFET™ Isometric MX

Single FETs, MOSFETs datasheet and documents for IRF8308MTRPBF

IRF8308MTRPBF

Single FETs, MOSFETs Overview

The IRF8308MTRPBF is a single N-channel HEXFET power MOSFET utilizing DirectFET MX packaging. It features a maximum drain-to-source voltage of 30V and a gate-to-source voltage limit of ±20V. The device provides a continuous drain current of 27A at 25°C case temperature, with a pulsed current rating of 150A. Static drain-to-source on-resistance is typically 1.9mΩ at 10V gate drive and 2.7mΩ at 4.5V. Total gate charge is typically 28nC at 4.5V. Thermal resistance from junction to case is 1.4°C/W, supporting operation up to a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

  • DirectFET MX package enables dual-sided cooling for enhanced thermal transfer.
  • Ultra-low package inductance reduces switching losses.
  • Optimized parameters for synchronous buck converter applications.
  • High Cdv/dt-induced turn-on immunity.

Single FETs, MOSFETs Applications

  • CPU core DC-DC converters
  • Synchronous buck converter socket applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration. Ensure manufacturing processes adhere to application note AN-1035 for DirectFET assembly methods.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management capabilities based on the requirement for dual-sided cooling to maximize heat dissipation. Consider the low on-resistance and gate charge characteristics for high-frequency switching efficiency. Verify compatibility with existing surface mount techniques and PCB layout geometries.

Single FETs, MOSFETs Part Context

This component belongs to the DirectFET family, combining HEXFET silicon technology with advanced packaging. It offers a footprint similar to SO-8 but with a profile under 0.7mm. The design targets high-efficiency power systems requiring low conduction and switching losses.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the DirectFET MX outline and substrate specifications for proper thermal and mechanical integration.

Single FETs, MOSFETs FAQ

Is the IRF8308MTRPBF compatible with standard surface mount soldering techniques?

Yes, it is compatible with vapor phase, infrared, or convection soldering when following application note AN-1035.

What is the primary advantage of the DirectFET MX package regarding thermal performance?

It allows dual-sided cooling, which improves thermal resistance by up to 80% compared to previous bests.

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