IRFI9530N

Single FETs, MOSFETs Overview

The IRFI9530N is a P-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 7.7 A at case temperature. The device utilizes TO-220FP (TO-220AB Full-Pak) through-hole packaging. Key electrical parameters include a maximum on-resistance (Rds(on)) of 200 mΩ and a gate charge (Qg) of approximately 38.7 nC. It supports an operating junction temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode construction for high-side switching applications
• Low-profile TO-220FP full-pak package design for efficient thermal dissipation
• Fast switching characteristics enabled by advanced silicon process technology
• Avalanche-rated capability for robust performance in inductive load scenarios

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring low-side or high-side control
• Motor driver interfaces for small to medium-sized motors
• Power management modules in industrial automation systems
• Battery protection circuits within portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'FP' or 'Full-Pak' when sourcing, as standard TO-220 packages differ physically. Confirm RoHS compliance status with the supplier, as older batches may vary. Ensure the ordering part number matches the exact pinout and thermal pad requirements of your PCB footprint to prevent assembly errors.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and moderate current handling are required in a through-hole format. Compare Rds(on) values against similar P-channel devices to optimize conduction losses. Consider the thermal resistance of the TO-220FP package relative to your expected power dissipation levels during continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET power MOSFET series, known for optimized trade-offs between on-resistance and gate charge. It serves as a legacy alternative to newer surface-mount variants like the IRF9530NS, offering comparable electrical performance in a traditional through-hole form factor suitable for prototyping and high-reliability assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRF9530NPBF (standard TO-220AB) if mechanical clearance allows. For surface-mount designs, the IRF9530NS offers identical electrical specifications in a D2PAK package. Verify pin compatibility before swapping between different package types.