IRFP344PBF

$1.83

Description：MOSFET N-CH 450V 9.5A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:24520e7cd323 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFP344PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 450V 9.5A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP344PBF

Description：MOSFET N-CH 450V 9.5A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：630mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP344PBF

IRFP344PBF

Single FETs, MOSFETs Overview

The IRFP344PBF is a Vishay Siliconix N-Channel Power MOSFET in a TO-247 package. It features a drain-source voltage of 450 V and a continuous drain current of 9.5 A at 25 °C case temperature. The maximum on-state resistance is 0.63 Ω at VGS = 10 V. Total gate charge is 80 nC, with turn-on delay time of 8.7 ns and rise time of 28 ns. Maximum power dissipation is 150 W at 25 °C. Operating junction temperature range is -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Repetitive avalanche rated for ruggedized operation
Isolated central mounting hole for enhanced safety creepage distances
Fast switching characteristics with simple drive requirements
Ease of paralleling capability

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring higher power levels than TO-220 devices
Switching circuits requiring repetitive avalanche energy handling
High-voltage power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and package variations. Confirm that the component matches the exact Vishay part number and datasheet revision required for your design specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and thermal robustness are required. The isolated mounting hole distinguishes it from earlier packages. Ensure the application accounts for the 0.63 Ω on-resistance and appropriate heat sinking to maintain junction temperatures within the specified limits during continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the third-generation Power MOSFET series from Vishay Siliconix. It utilizes silicon technology to provide a combination of fast switching and low on-resistance. The TO-247 package is designed for commercial-industrial environments where superior thermal performance and safety compliance are necessary.