IRFR13N20DTRL

Single FETs, MOSFETs Overview

The IRFR13N20D is an N-channel HEXFET power MOSFET from Infineon Technologies, rated for a drain-source voltage of 200V. It features a maximum on-resistance of 0.235Ω at VGS=10V and ID=8A, supporting a continuous drain current of 13A at 25°C case temperature. The device utilizes D-Pak (TO-252AA) or I-Pak (TO-251AA) packages. Key electrical characteristics include a total gate charge of 25 to 38nC, a single-pulse avalanche energy rating of 130mJ, and a junction-to-case thermal resistance of 1.4°C/W. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• HEXFET technology designed for high-frequency DC-DC converters with low gate-drain charge to reduce switching losses.
• Fully characterized capacitance parameters including effective output capacitance to simplify circuit design.
• Robust avalanche performance with fully characterized breakdown voltage and current capabilities.

Single FETs, MOSFETs Applications

• High frequency DC-DC converters
• Telecom 48V input forward converters
• Typical SMPS topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both D-Pak (IRFR13N20D) and I-Pak (IRFU13N20D). Confirm that the ordering suffix matches the intended reel configuration if applicable. Ensure the component source aligns with Infineon Technologies specifications. Cross-reference the absolute maximum ratings against your system's peak transient conditions to guarantee operational safety margins.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 200V blocking capability with moderate current handling up to 13A. The low gate charge profile makes it suitable for designs prioritizing reduced switching losses in high-frequency environments. Evaluate the thermal resistance requirements based on the expected power dissipation and ambient operating conditions to ensure the junction temperature remains within the specified limits during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, representing a standard solution for general-purpose switching applications. It serves as a foundational component in power electronics, specifically targeting isolated and non-isolated converter architectures where reliable high-voltage switching is critical. The device integrates robust body diode characteristics suitable for synchronous rectification or freewheeling duties.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 200V rating, TO-252/TO-251 footprint, and similar RDS(on) and Qg values. Verify pinout compatibility and thermal resistance specifications before implementation.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy?

The IRFR13N20D supports a single-pulse avalanche energy of 130mJ when starting at a junction temperature of 25°C.

How does the effective output capacitance aid design?

The Coss eff parameter provides a fixed capacitance value that simplifies the calculation of charging times during the voltage rise phase from 0 to 80% of VDSS.