IRFS9N60APBF

$1.81

Description：MOSFET N-CH 600V 9.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:542380982914 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFS9N60APBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 9.2A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS9N60APBF

Description：MOSFET N-CH 600V 9.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS9N60APBF

IRFS9N60APBF

Single FETs, MOSFETs Overview

The IRFS9N60APBF is a Vishay Siliconix N-Channel Power MOSFET housed in a D2PAK (TO-263) package. It features a drain-source voltage of 600 V and a continuous drain current of 9.2 A at 25 °C case temperature. The maximum on-state resistance is 0.75 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge of 49 nC, input capacitance of 1400 pF, and output capacitance of 180 pF. Maximum power dissipation is 170 W at 25 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
Active clamped forward topologies
Mains switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status. The 'PbF' suffix indicates lead-free and halogen-free construction, whereas standard suffixes may denote non-RoHS compliant parts with lead terminations. Confirm RoHS and REACH-SVHC details directly from the manufacturer's datasheet or official documentation before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust avalanche performance. Evaluate thermal derating curves for operating temperatures above 25 °C, as continuous drain current decreases significantly at higher case temperatures. Ensure gate drive voltages remain within the specified ±30 V limit to prevent device damage.

Single FETs, MOSFETs Part Context

This part belongs to the IRFS9N60A/SiHFS9N60A family of high-voltage silicon MOSFETs manufactured by Vishay Siliconix. These devices are designed for general-purpose power switching and utilize advanced planar trench technology to achieve low on-resistance and improved ruggedness compared to older generation products.