Single FETs, MOSFETs IRFU210PBF product image

IRFU210PBF

$0.43
  • Description:MOSFET N-CH 200V 2.6A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:f2e36b527f2f Category: Brand:

  
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IRFU210PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 2.6A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU210PBF

  • Description:MOSFET N-CH 200V 2.6A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251AA
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU210PBF

IRFU210PBF

Single FETs, MOSFETs Overview

The IRFU210PBF is a Vishay Siliconix third-generation N-channel power MOSFET housed in a straight-lead IPAK (TO-251) package designed for through-hole mounting. It features a 200 V drain-source voltage rating and a continuous drain current of 2.6 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 1.5 Ω at VGS = 10 V, with a total gate charge of 8.2 nC. Thermal performance includes a junction-to-case resistance of 5.0 °C/W and a maximum power dissipation of 25 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Repetitive avalanche rated for ruggedized operation
  • Fast switching characteristics with dynamic dV/dt rating
  • Straight lead configuration for through-hole applications

Single FETs, MOSFETs Applications

  • High-voltage switching circuits
  • Power conversion systems
  • General-purpose power control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements and manufacturing origin. Confirm that the straight-lead IPAK package matches the intended PCB footprint and mechanical constraints. Ensure thermal management strategies align with the specified linear derating factors and maximum junction temperature limits during system integration.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole N-channel MOSFET with a 200 V breakdown voltage is required. The 1.5 Ω on-resistance at 10 V gate drive suits moderate current applications up to 2.6 A. Consider the repetitive avalanche capability for inductive load protection. Evaluate thermal resistance ratings against the expected ambient conditions and heat sinking capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/IRFU210 family of third-generation power MOSFETs from Vishay Siliconix. The series provides a combination of fast switching and low on-resistance. While surface-mount variants like the IRFR210 use the DPAK package, the IRFU210 variant specifically utilizes the IPAK package for through-hole mounting needs.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for cross-reference data. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substituting.

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