IRL640PBF-BE3

$1.90

Description：MOSFET N-CH 200V 17A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:f5c2d4986c25 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRL640PBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 17A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL640PBF-BE3

Description：MOSFET N-CH 200V 17A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRL640PBF-BE3

IRL640PBF-BE3

Single FETs, MOSFETs Overview

The IRL640PBF-BE3 is a Vishay Siliconix N-Channel Power MOSFET in a TO-220AB package. It features a 200 V drain-source voltage and a 17 A continuous drain current at 25 °C case temperature. The device has a maximum on-resistance of 0.18 Ω at VGS = 5.0 V and 66 nC total gate charge. It supports a peak diode recovery dV/dt of 5.0 V/ns, operates from -55 to +150 °C, and dissipates up to 125 W.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive with RDS(on) specified at VGS = 4 V and 5 V
Repetitive avalanche rated for ruggedized operation
Fast switching capability with dynamic dV/dt rating
Ease of paralleling due to simple drive requirements

Single FETs, MOSFETs Applications

Commercial-industrial power applications
Switching circuits requiring logic-level control
Power dissipation levels up to approximately 50 W

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3 confirms lead-free and halogen-free compliance when sourcing this component. Confirm that the TO-220AB package matches your thermal management design. Ensure the datasheet revision aligns with your manufacturing specifications. Validate RoHS status against project requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this part for designs requiring a 200 V breakdown voltage and logic-level gate compatibility. The low on-resistance at 5 V makes it suitable for direct microcontroller or standard logic interface. Consider the TO-220AB package for through-hole mounting and adequate heat sinking capabilities in industrial environments.

Single FETs, MOSFETs Part Context

This component belongs to the third-generation HEXFET family from Vishay Siliconix. These devices combine fast switching, ruggedized design, and low on-resistance. The TO-220AB package is widely accepted in commercial and industrial sectors for its balance of thermal performance and cost-effectiveness.