IRLR014TR

Description：MOSFET N-CH 60V 7.7A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:0b45be9d9535 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRLR014TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 7.7A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR014TR

Description：MOSFET N-CH 60V 7.7A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR014TR

IRLR014TR

Single FETs, MOSFETs Overview

The IRLR014TR is a third-generation N-channel Power MOSFET from Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 7.7 A at 25 °C case temperature. The device offers a maximum on-resistance of 0.20 Ω at VGS = 5 V and 0.28 Ω at VGS = 4 V. Key dynamic parameters include a total gate charge of 8.4 nC, turn-on delay time of 9.3 ns, and fall time of 26 ns. Thermal resistance from junction to case is 5.0 °C/W.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for direct interfacing with standard logic circuits
Fast switching performance with low internal source and drain inductance
High ruggedness characterized by dynamic dV/dt rating and avalanche energy capability

Single FETs, MOSFETs Applications

Surface-mount power switching applications utilizing vapor phase, infrared, or wave soldering
Low-side switching configurations in DC-DC converters
Motor control circuits requiring fast transient response

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure that the procurement specifications align with the required thermal management capabilities and absolute maximum ratings defined in the datasheet to prevent operational failure under stress conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with a 60 V breakdown voltage and logic-level compatibility is required. The DPAK package is suitable for surface-mount assembly where moderate power dissipation up to 2.5 W on a PCB is anticipated. Consider the 0.20 Ω on-resistance specification at VGS = 5 V for efficiency optimization in low-voltage drive environments.

Single FETs, MOSFETs Part Context

This part belongs to the IRLR series of third-generation power MOSFETs manufactured by Vishay Siliconix. The series is designed to provide a combination of fast switching, ruggedized device design, and low on-resistance. The IRLR014 specifically utilizes the DPAK (TO-252) form factor, distinguishing it from the straight-lead IRLU variants within the same electrical family.