IRLS4030-7PPBF

Description：MOSFET N-CH 100V 190A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:e607d8e7d730 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLS4030-7PPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLS4030-7PPBF

Description：MOSFET N-CH 100V 190A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 110A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：11490 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Single FETs, MOSFETs datasheet and documents for IRLS4030-7PPBF

IRLS4030-7PPBF

Single FETs, MOSFETs Overview

The IRLS4030-7PPbF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 100V drain-to-source breakdown voltage and a continuous drain current of 190A at a case temperature of 25°C. The device exhibits a maximum on-resistance of 3.9mΩ at VGS=4.5V and 4.1mΩ at VGS=10V, with typical values of 3.2mΩ and 3.3mΩ respectively. Total gate charge is typically 93nC at VGS=4.5V. It is housed in a lead-free D2PAK-7 (TO-263) surface-mount package.

Single FETs, MOSFETs Feature Summary

Optimized for logic level drive with very low RDS(ON) at 4.5V VGS
Superior R*Q figure of merit at 4.5V VGS
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA

Single FETs, MOSFETs Applications

DC Motor Drive
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Ensure the component meets RoHS compliance requirements for your assembly process. Confirm that the D2PAK-7 footprint matches your PCB design guidelines. Check for any specific handling or storage precautions outlined in the datasheet regarding moisture sensitivity levels.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating is required alongside high current capabilities up to 190A. The optimized logic level drive makes it suitable for direct driving from standard logic controllers without additional gate drivers. Consider the thermal resistance characteristics and ensure adequate heatsinking or PCB copper area to manage power dissipation effectively under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed for industrial market applications. The device is fully characterized for safe operating area and avalanche energy, providing robust performance in demanding switching environments compared to standard discrete transistors.

Single FETs, MOSFETs Replacement Considerations

IRLB4030

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy?

The maximum repetitive avalanche energy (EAR) depends on the duty cycle and starting junction temperature, as detailed in the avalanche characteristics section of the datasheet.