ISC028N03LF2SATMA1

Single FETs, MOSFETs Overview

The ISC028N03LF2S is a StrongIRFET™ 2 N-channel power MOSFET rated for 30 V drain-source voltage. It features a maximum on-state resistance of 2.8 mΩ at 10 V gate drive and supports a continuous drain current of 128 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to 175 °C and utilizes a PG-TDSON-8 package.

Single FETs, MOSFETs Feature Summary

• Logic-level operation optimized for low gate drive voltages
• High avalanche energy capability with 100% testing
• Lead-free plating compliant with RoHS standards

Single FETs, MOSFETs Applications

• Low-side switching in DC-DC converters
• Motor control applications
• Power distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering code against Infineon's official documentation before procurement. Confirm that the component matches the required PG-TDSON-8 package dimensions and thermal characteristics. Ensure compliance with specific environmental standards such as halogen-free requirements if mandated by the design specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for high-current switching applications. Evaluate the thermal resistance values relative to the PCB copper area available for heat dissipation. Consider the gate charge parameters to ensure compatibility with the intended driver circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET™ 2 family, which integrates planar and trench technologies. It is designed for high efficiency and robust performance in automotive and industrial environments. The device offers improved switching characteristics compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include ISZ028N03LF2SATMA1 and IPB018N03LF2SATMA1. Verify pinout compatibility and thermal resistance differences when substituting these parts.