IV1Q12050T4

$12.21

Description：SIC MOSFET, 1200V 50MOHM, TO-247
Series：-
Mfr：Inventchip
Package：Tube

SKU:358b3b5ab89e Category: Single FETs, MOSFETs Brand: Inventchip

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IV1Q12050T4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 50MOHM, TO-247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12050T4

Description：SIC MOSFET, 1200V 50MOHM, TO-247
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2750 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：344W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV1Q12050T4

IV1Q12050T4

Single FETs, MOSFETs Overview

The IV1Q12050T4 is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip, designed for high-power applications. It features an N-channel configuration with a drain-source voltage rating of 1.2 kV and a maximum continuous drain current of 58 A. The device exhibits a low on-resistance of 50 mΩ at 20 V gate drive and 20 A current. Key electrical characteristics include a gate charge of 120 nC and a threshold voltage of 3.2 V. It operates within a junction temperature range of -55 °C to 175 °C and is housed in a TO-247-4 package.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide technology for superior thermal performance and efficiency compared to traditional silicon devices.
Features a low on-resistance characteristic to minimize conduction losses in high-current switching applications.
Designed with a robust package capable of handling high power dissipation and extreme operating temperatures.

Single FETs, MOSFETs Applications

High-frequency switched-mode power supplies
DC-DC converters
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet for the IV1Q12050T4 to confirm pinout configurations and absolute maximum ratings before integration. Ensure that the TO-247-4 package footprint matches the target PCB design. Cross-reference the thermal resistance values provided in official documentation to validate heat sink requirements for the intended power dissipation levels.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capability and efficient switching at elevated temperatures. The SiC material offers advantages in high-frequency operation due to reduced switching losses. Consider the 50 mΩ on-resistance for efficiency calculations under load conditions. Verify compatibility with gate driver voltages, specifically the 20 V drive requirement for optimal performance.

Single FETs, MOSFETs Part Context

Inventchip specializes in power semiconductor solutions, including SiC MOSFETs and diodes. The IV1Q12050T4 belongs to their series of high-voltage power switches aimed at improving energy efficiency in industrial and automotive electronics. This part represents the shift towards wide-bandgap semiconductors for demanding power conversion tasks.

Single FETs, MOSFETs Replacement Considerations

Consult official Inventchip documentation or authorized distributors for confirmed equivalent part numbers. Do not assume cross-compatibility with other manufacturers' SiC MOSFETs without verifying electrical parameters and pin assignments.