IV1Q12080T3

$7.18

Description：SIC MOSFET, 1200V 80MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube

SKU:c2fe1b32d98d Category: Single FETs, MOSFETs Brand: Inventchip

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IV1Q12080T3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 80MOHM, TO247-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12080T3

Description：SIC MOSFET, 1200V 80MOHM, TO247-
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：5V @ 3.8mA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IV1Q12080T3

IV1Q12080T3

Single FETs, MOSFETs Overview

The IV1Q12080T3 is a silicon carbide (SiC) MOSFET featuring a 1200V drain-source voltage rating and an 80mΩ maximum static on-resistance at 25°C. It supports a continuous drain current of 42A at 25°C case temperature, with a pulsed drain current capability of 70A. The device operates within a junction temperature range of -55°C to 175°C and utilizes a TO247-3 package.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
Fast switching performance characterized by low capacitance values
Robust intrinsic body diode with very fast reverse recovery characteristics
High operating junction temperature capability up to 175°C

Single FETs, MOSFETs Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Motor drivers
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that thermal management solutions align with the specified thermal resistance from junction to case. Ensure gate drive voltages remain within the recommended turn-on and turn-off limits to maintain device reliability and prevent overstress during operation.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage applications require superior thermal performance and reduced switching losses compared to traditional silicon devices. The TO247-3 package facilitates effective heat dissipation for high-power density designs. Evaluate the total gate charge and switching energy parameters to optimize driver circuit design and minimize electromagnetic interference in the target system architecture.

Single FETs, MOSFETs Part Context

This component belongs to InventChip's silicon carbide MOSFET portfolio, designed for high-efficiency power conversion systems. The device leverages SiC material properties to achieve higher breakdown voltages and lower conduction losses. It serves as a critical switching element in modern power electronics requiring robust performance under extreme thermal conditions.