IV2Q12160T4Z

Single FETs, MOSFETs Overview

The IV2Q12160T4Z is a second-generation Silicon Carbide (SiC) MOSFET designed for automotive applications, featuring AEC-Q101 qualification. It operates with a drain-source voltage of 1200V and offers a typical static on-resistance of 160mΩ at VGS=18V and ID=5A. The device supports continuous drain currents up to 20A at 25°C case temperature and handles pulsed currents of 50A. It utilizes a TO-247-4 package with Kelvin gate input to facilitate driver circuit design. Key electrical characteristics include a total gate charge of 29nC and an operating junction temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive
• Kelvin gate input configuration to simplify driver circuit design
• Ultra-fast and robust intrinsic body diode performance
• High-speed switching capabilities with low capacitance values

Single FETs, MOSFETs Applications

• EV DC/DC converters
• Solar boosters
• Automotive compressor inverters
• AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4Z against the manufacturer's current datasheet revision to ensure compatibility with required packaging or marking specifications. Confirm that the procurement channel provides documentation verifying AEC-Q101 qualification status, as this certification is critical for the intended automotive application scenarios.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high blocking voltage and low conduction losses in automotive environments. The TO-247-4 package facilitates thermal management through direct case mounting. Ensure the gate driver can supply the recommended turn-on voltage of 15V to 18V and the recommended turn-off voltage of -3.5V to optimize switching performance and minimize losses.

Single FETs, MOSFETs Part Context

Inventchip Technology manufactures this device using its proprietary second-generation SiC process. The company focuses on silicon carbide power devices and gate driver ICs. This specific model represents their automotive-grade discrete semiconductor offering, leveraging advanced materials to achieve superior efficiency compared to traditional silicon-based alternatives in high-voltage power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Check for Inventchip models within the same Gen2 family sharing identical pinouts and thermal characteristics. Verify that any substitute maintains the 1200V rating and comparable RDS(on) values. Ensure the replacement part also holds AEC-Q101 qualification if the application strictly requires automotive compliance.