IXFB80N50Q2

Single FETs, MOSFETs Overview

The IXFB80N50Q2 is a HiPerFET Power MOSFET from the Q2-Class series, manufactured by IXYS. It is an N-Channel Enhancement Mode device rated for 500V drain-source breakdown voltage and 80A continuous drain current. The component features a low on-resistance of 65mΩ at 10V gate drive. It utilizes a miniBLOC package with aluminum nitride isolation for efficient thermal management. Key electrical characteristics include a maximum gate charge of 380nC and a power dissipation capacity of 700W.

Single FETs, MOSFETs Feature Summary

• Double metal process architecture designed to achieve low gate resistance
• miniBLOC package construction incorporating aluminum nitride isolation layers
• Unclamped Inductive Switching (UIS) capability for robust operation
• Optimized for high dV/dt performance and low intrinsic reverse recovery time

Single FETs, MOSFETs Applications

• DC-DC converters
• Switched-mode power supplies
• Resonant-mode power supplies
• DC choppers
• Pulse generators

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision when sourcing, as manufacturing parameters may evolve. Confirm that the miniBLOC package variant matches the required mounting footprint. Ensure the Q2-Class designation aligns with the intended switching frequency requirements. Cross-reference the manufacturer's official documentation for any recent design changes or compliance updates before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and reliable inductive switching. The low gate resistance facilitates easier driver interface compared to standard variants. The miniBLOC package offers superior heat dissipation for chassis-mounted designs. Evaluate the UIS rating against potential circuit fault conditions to ensure adequate safety margins during transient events.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET family, representing IXYS' advanced silicon MOSFET technology. The Q2-Class designation indicates specific optimizations for gate drive efficiency and switching speed. It serves as a high-power discrete solution within the broader portfolio of power semiconductors designed for industrial and commercial energy conversion systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IXFN80N50Q2 and IXFK80N50P. Verify pinout compatibility and thermal resistance values when replacing with these alternatives. Ensure the replacement device meets the same 500V and 80A ratings to maintain system integrity.