IXFN120N25

Single FETs, MOSFETs Overview

The IXFN120N25 is a single N-channel Power MOSFET manufactured by IXYS, utilizing silicon technology. It features a SOT-227B (SOT-227-4) package designed for screw mounting. The device supports a drain-source voltage of 200V and a continuous drain current of 120A. Key electrical characteristics include a maximum gate-source voltage range of -30V to +30V and a threshold voltage of 6.5V. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 1kW.

Single FETs, MOSFETs Feature Summary

• High-current capability with 120A continuous drain rating
• Robust thermal management via screw-mount SOT-227B package
• Enhanced mode operation for efficient switching control

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply inverters
• High-power DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P' or absence thereof against official IXYS documentation, as variants may exist. Confirm RoHS compliance status directly from the manufacturer's datasheet before integration. Ensure the sourcing channel provides authentic components with traceable manufacturing records to avoid counterfeit risks in high-power applications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling at moderate voltage levels. The SOT-227B package necessitates appropriate heatsinking solutions due to its 1kW dissipation rating. Compare against lower voltage alternatives if system requirements allow, ensuring the 200V breakdown voltage aligns with peak transient voltages in the target circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS discrete MOSFET portfolio, specifically engineered for power electronics. It represents a standard N-channel enhancement mode device suitable for general-purpose high-power switching. The product line focuses on silicon-based solutions offering reliable performance in demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers. Ensure replacement devices meet or exceed the 120A current and 200V voltage specifications.