IXFR15N100Q3

Single FETs, MOSFETs Overview

The IXFR15N100Q3 is a single N-channel enhancement mode power MOSFET from the HiPerFET Q3-Class series, manufactured by IXYS. It utilizes silicon technology and features an ISOPLUS247 three-pin through-hole package with the case connected to the drain. Key electrical parameters include a maximum drain-source voltage of 1 kV, a continuous drain current of 10 A at case temperature, and a maximum on-resistance of 1.2 Ω. The device supports a maximum power dissipation of 400 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability rated for 1 kV drain-source breakdown.
• Integrated body diode for inductive load switching applications.
• Robust thermal design suitable for high-power density modules.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control drives
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your circuit requirements. Confirm that the ISOPLUS247 package dimensions match your PCB footprint and thermal management strategy. Check for any recent product change notices regarding material composition or manufacturing site changes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 1 kV rating is required with moderate current handling capabilities around 10 A. The ISOPLUS247 package offers a balance between thermal performance and mounting simplicity compared to larger modules. Consider the 1.2 Ω on-resistance impact on conduction losses relative to the application's duty cycle and cooling constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET Q3-Class family, designed for high-efficiency power conversion. It represents a silicon-based solution distinct from the company's newer ultra-junction technologies. The Q3-Class designation indicates specific optimization for fast switching and ruggedness in industrial environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 1 kV, 10 A class MOSFETs in the ISOPLUS247 or TO-247 packages from various manufacturers. Ensure replacement parts match the pinout configuration and thermal characteristics. Verify that the replacement's gate charge and threshold voltage are compatible with existing drive circuits.