IXFX48N60Q3

Single FETs, MOSFETs Overview

The IXFX48N60Q3 is a N-channel power MOSFET from the HiPerFET Q3 Class series, manufactured by IXYS. It features a TO-247-3 through-hole package with a drain-connected case. Key electrical parameters include a 600V drain-source breakdown voltage (VDSS), a continuous drain current of 48A at 25°C, and a maximum on-resistance (RDS(on)) of 140mΩ. The device has a gate threshold voltage of up to 6.5V at 4mA and a maximum gate charge of 140nC at 10V. Input capacitance is 7020pF at 25V. It supports a power dissipation of 1000W at the case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• HiPerFET Q3 Class technology optimized for low conduction losses and fast switching performance.
• Avalanche rated capability for robust operation under inductive load switching conditions.
• Fast intrinsic body diode with controlled reverse recovery characteristics.
• Drain-connected case design facilitates efficient thermal management via direct mounting.

Single FETs, MOSFETs Applications

• High-frequency power inversion circuits
• Uninterruptible Power Supply (UPS) systems
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes upon receipt to ensure authenticity. Confirm that the component matches the TO-247-3 package dimensions and pinout configuration required by the target PCB footprint. Check datasheet revisions for any updates to thermal resistance or electrical limits before finalizing the bill of materials.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling and low on-resistance is required. The TO-247-3 package is suitable for applications requiring robust mechanical mounting and effective heat sinking. Consider the gate charge specifications when designing drive circuits to ensure adequate switching speed without excessive driver loss.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family, which utilizes advanced planar trench technology to achieve superior performance compared to standard planar MOSFETs. The Q3 Class designation indicates specific optimizations for reverse recovery behavior and avalanche ruggedness, targeting high-efficiency power conversion applications where switching losses are critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600V VDSS, 48A ID, and TO-247-3 package. Verify RDS(on) and Qg values to ensure equivalent thermal and drive requirements. Cross-reference with other HiPerFET Q3 variants if pin compatibility is strictly required.