IXTJ3N150

Description：MOSFET N-CH TO247
Series：-
Mfr：IXYS
Package：Bulk

SKU:761bcba26201 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTJ3N150 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTJ3N150

Description：MOSFET N-CH TO247
Series：-
Mfr：IXYS
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IXTJ3N150

IXTJ3N150

Single FETs, MOSFETs Overview

The IXTJ3N150 is a silicon N-Channel enhancement mode power MOSFET manufactured by IXYS. It features a 1500V drain-source breakdown voltage and a continuous drain current of 3A. The device utilizes a TO-264AA (TO-264) through-hole package with three terminals. Key electrical characteristics include a maximum gate-source voltage of ±30V, a typical gate charge of 180nC, and a minimum forward transconductance of 1.4S. It operates within a junction temperature range of -55°C to +150°C and supports avalanche-rated operation.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 1500V drain-source breakdown rating
Avalanche rated for robust energy handling in switching applications
Fast intrinsic diode for efficient commutation
Enhancement mode N-Channel configuration

Single FETs, MOSFETs Applications

High voltage DC-DC converters
Induction heating systems
Resonant tank circuits
High voltage motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix or variant against the official IXYS datasheet to ensure compatibility with required thermal and electrical specifications. Confirm package dimensions and pinout alignment with PCB footprints prior to integration. Check for RoHS compliance status as indicated in the manufacturer's documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation with moderate current handling capabilities. The TO-264 package offers suitable thermal dissipation for through-hole mounting. Ensure gate drive circuitry accommodates the specified threshold voltage and gate charge requirements for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS high-voltage MOSFET portfolio, designed for demanding power electronics applications. It complements other devices in the series offering varying current ratings while maintaining the 1500V blocking capability standard for industrial and commercial power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Consult official IXYS substitution guides for verified equivalents. Cross-reference parameters such as Rds(on), Qg, and package type when evaluating alternative components from other manufacturers.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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