IXTQ160N085T

Description：MOSFET N-CH 85V 160A TO3P
Series：-
Mfr：IXYS
Package：Tube

SKU:374b11a0b8ab Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTQ160N085T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 85V 160A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTQ160N085T

Description：MOSFET N-CH 85V 160A TO3P
Series：-
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：85 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for IXTQ160N085T

IXTQ160N085T

Single FETs, MOSFETs Overview

The IXTQ160N085T is a single N-channel silicon power MOSFET manufactured by IXYS. It features an 85V drain-source breakdown voltage and supports a continuous drain current of 160A. The device exhibits a maximum on-resistance of 6 milliohms at a gate-source voltage of 10V. It operates within a temperature range from -55°C to +175°C and has a total power dissipation rating of 360W. The component utilizes the TO-263 (D2PAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes IXYS Gen1 Trench Gate technology for optimized switching performance
Designed for high-current applications with low conduction losses
Capable of operation in extended industrial temperature environments

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power supply modules

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer date code and lot traceability upon receipt, as this component may be subject to obsolescence or end-of-life status. Ensure that the physical marking on the TO-263 package matches the official datasheet specifications exactly. Confirm RoHS compliance documentation is provided by the supplier to meet environmental regulatory requirements for modern electronic assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust current handling capabilities near 160A with minimal voltage drop. The low on-resistance makes it suitable for efficiency-critical designs where thermal management is a priority. Consider the TO-263 package footprint during PCB layout to ensure adequate copper area for heat dissipation and reliable soldering connections.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS discrete semiconductor portfolio, specifically within their power MOSFET lineup. It represents a standard solution for medium-voltage, high-current switching applications. The product line focuses on delivering reliability and efficiency for industrial and commercial power electronics, leveraging established silicon manufacturing processes.