Single Bipolar Transistors JAN2N3999 product image

JAN2N3999

$106.19
  • Description:TRANS NPN 80V 10A TO-59
  • Series:-

SKU:08b3541e7f70 Category: Brand:

  
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JAN2N3999 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 10A TO-59. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N3999

  • Description:TRANS NPN 80V 10A TO-59
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 500mA, 5A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 1A, 2V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:TO-210AA, TO-59-4, Stud
  • Supplier Device Package:TO-59
  • Grade:Military
  • Qualification:MIL-PRF-19500/374

Single Bipolar Transistors datasheet and documents for JAN2N3999

JAN2N3999

Single Bipolar Transistors Overview

The JAN2N3999 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and features a stud-mount installation type within a TO-59 package. The device supports a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V. It handles a maximum power dissipation of 2 W with an operating junction temperature range from -65°C to +200°C. DC current gain is specified at a minimum of 80 under defined test conditions.

Single Bipolar Transistors Feature Summary

  • Military-grade qualification for high-reliability applications
  • High current handling capability up to 10 A
  • Extended thermal stability for extreme environments

Single Bipolar Transistors Applications

  • Military radar systems
  • Aviation power control circuits
  • Spacecraft electronic subsystems

Single Bipolar Transistors Procurement Notes

Verify the JAN prefix indicates full military compliance and lot traceability. Confirm the specific revision level matches project requirements. Ensure proper stud-mounting torque specifications are followed during assembly. Check for any recent manufacturing change notifications that may affect electrical parameters or packaging details before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and radiation hardness are required in harsh environments. Compare against commercial equivalents if cost is a primary constraint, noting potential differences in temperature ranges and failure rates. Ensure the TO-59 package fits the mechanical constraints of the heat sink interface.

Single Bipolar Transistors Part Context

This part belongs to the 2N399x series of power transistors produced by Microchip's defense division. It serves as a ruggedized alternative to commercial BJT variants, offering enhanced performance consistency across wide temperature swings. The series is commonly used in critical infrastructure where component failure is not an option.

Single Bipolar Transistors Replacement Considerations

JAN2N3999A

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The maximum continuous collector current is 10 A.

Is this component RoHS compliant?

No, military-grade parts like the JAN2N3999 typically do not meet standard RoHS directives due to material exemptions.

What package style does it use?

It uses a stud-mount configuration housed in a TO-59 package.

JAN2N3999JAN2N3999
$106.19
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