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JAN2N3999 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 10A TO-59. Review the specifications below when checking this part for your BOM.
The JAN2N3999 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and features a stud-mount installation type within a TO-59 package. The device supports a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V. It handles a maximum power dissipation of 2 W with an operating junction temperature range from -65°C to +200°C. DC current gain is specified at a minimum of 80 under defined test conditions.
Verify the JAN prefix indicates full military compliance and lot traceability. Confirm the specific revision level matches project requirements. Ensure proper stud-mounting torque specifications are followed during assembly. Check for any recent manufacturing change notifications that may affect electrical parameters or packaging details before finalizing orders.
Select this component when high reliability and radiation hardness are required in harsh environments. Compare against commercial equivalents if cost is a primary constraint, noting potential differences in temperature ranges and failure rates. Ensure the TO-59 package fits the mechanical constraints of the heat sink interface.
This part belongs to the 2N399x series of power transistors produced by Microchip's defense division. It serves as a ruggedized alternative to commercial BJT variants, offering enhanced performance consistency across wide temperature swings. The series is commonly used in critical infrastructure where component failure is not an option.
JAN2N3999A
The maximum continuous collector current is 10 A.
No, military-grade parts like the JAN2N3999 typically do not meet standard RoHS directives due to material exemptions.
It uses a stud-mount configuration housed in a TO-59 package.
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