Single Bipolar Transistors JAN2N5237 product image

JAN2N5237

$16.91
  • Description:TRANS NPN 120V 10A TO-5
  • Series:-

SKU:ad5db30f1b6c Category: Brand:

  
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JAN2N5237 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 120V 10A TO-5. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N5237

  • Description:TRANS NPN 120V 10A TO-5
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 5A, 5V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5
  • Grade:Military
  • Qualification:MIL-PRF-19500/394

Single Bipolar Transistors datasheet and documents for JAN2N5237

JAN2N5237

Single Bipolar Transistors Overview

The JAN2N5237 is a military-grade NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It utilizes a single configuration designed for through-hole mounting in rugged environments. The device supports a maximum DC collector current of 10 A and withstands a collector-emitter voltage (VCEO) of 120 V, with a collector-base voltage (VCBO) rating of 150 V. The emitter-base voltage (VEBO) is rated at 10 V. Power dissipation capability is specified at 1 W. The component operates within an extended temperature range from -65 °C to +200 °C, ensuring reliability under extreme thermal conditions.

Single Bipolar Transistors Feature Summary

  • Military-grade qualification for high-reliability applications
  • Extended operating temperature range up to +200 °C
  • High current handling capability of 10 A
  • Robust voltage ratings for power switching

Single Bipolar Transistors Applications

  • Military aerospace power systems
  • High-temperature industrial control circuits
  • Ruggedized power amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific JAN (Joint Army-Navy) grade designation against the manufacturer's official datasheet to ensure compliance with military specifications. Confirm that the package type matches the required through-hole footprint for your assembly process. Check for any recent Product Change Notifications (PCNs) regarding material or manufacturing site changes that may affect certification requirements.

Single Bipolar Transistors Selection Notes

Select this component when operation above standard commercial temperature limits is required, specifically exceeding +125 °C. Ensure the circuit design accounts for the 1 W power dissipation limit and appropriate heat sinking. Verify that the 10 A current rating meets peak load demands without exceeding safe operating area boundaries defined in the electrical characteristics table.

Single Bipolar Transistors Part Context

This part belongs to the 2N5237 family of power BJTs produced by Microchip Technology. While standard commercial variants exist, the JAN prefix indicates adherence to stricter military quality and screening standards. It serves as a discrete semiconductor solution for high-power switching and amplification where environmental robustness is critical.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for equivalent military-grade NPN power transistors. Verify pinout compatibility and thermal resistance values before substituting with other manufacturers' parts to maintain system integrity.

JAN2N5237JAN2N5237
$16.91
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