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JAN2N5662 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 200V 2A TO-5. Review the specifications below when checking this part for your BOM.
The JAN2N5662 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a through-hole package. The device supports a maximum collector-emitter voltage of 200 V and a continuous collector current of 1.2 A. It features a power dissipation rating of 5 W at case temperature, with an operating temperature range extending from -65 °C to +200 °C.
Verify the JAN2N5662 datasheet for specific electrical limits and mechanical drawings. Confirm that the procurement channel provides authentic Microchip components suitable for defense or high-reliability applications. Ensure compliance with all relevant environmental and trade regulations before integration into final designs.
Select this component when military-grade radiation hardness and extended temperature operation are required. Compare against standard commercial equivalents if cost reduction is prioritized over extreme reliability. Verify that the 5 W power dissipation rating aligns with the thermal management strategy of the target application.
This part belongs to the JAN series of transistors, which are designed to meet stringent military specifications. It serves as a rugged alternative to commercial BJTs, offering enhanced durability and performance consistency in demanding operational conditions where standard components may fail.
JAN2N5662A
The maximum collector-emitter voltage (VCEO) is 200 V.
Yes, it operates reliably up to a maximum junction temperature of 200 °C.
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