Single Bipolar Transistors JAN2N6193 product image

JAN2N6193

$8.96
  • Description:TRANS PNP 100V 5A TO39
  • Series:-

SKU:114733a98a03 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

JAN2N6193 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 100V 5A TO39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N6193

  • Description:TRANS PNP 100V 5A TO39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.2V @ 500mA, 5A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)
  • Grade:Military
  • Qualification:MIL-PRF-19500/561

Single Bipolar Transistors datasheet and documents for JAN2N6193

JAN2N6193

Single Bipolar Transistors Overview

The JAN2N6193 is a PNP silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-39-3 package. The device features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. Power dissipation is rated at 1 W. The component operates within a temperature range of -65 °C to +200 °C. DC current gain ranges from a minimum of 40 to a maximum of 240. Collector-emitter saturation voltage is specified at 1.2 V, with an emitter-base voltage limit of 6 V.

Single Bipolar Transistors Feature Summary

  • High thermal stability enabling operation up to 200 °C
  • Robust 5 A continuous collector current capability
  • Military-grade reliability via MIL-STD-883 screening

Single Bipolar Transistors Applications

  • Military aerospace power switching circuits
  • High-reliability industrial amplifier stages
  • Ruggedized power regulation systems

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation upon receipt. Confirm that the TO-39-3 lead configuration matches the target PCB footprint. Ensure storage conditions prevent moisture ingress prior to soldering. Validate that the supplier provides full material declarations consistent with military procurement standards.

Single Bipolar Transistors Selection Notes

Select this component when high-temperature operation exceeding standard commercial limits is required. The 5 A current rating supports moderate power handling in compact through-hole layouts. Verify that the 100 V breakdown voltage aligns with the circuit's peak transient requirements. Consider the 1 W power dissipation limit relative to available heatsinking.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of discrete semiconductors produced under strict military quality controls. The JAN2N6193 serves as a ruggedized alternative to commercial equivalents, offering enhanced radiation hardness and extended temperature tolerance. It is commonly utilized in defense and space applications where standard components may fail due to environmental stress.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same TO-39-3 pinout and electrical ratings.

JAN2N6193JAN2N6193
$8.96
Buy Now

Recent News