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JAN2N6193 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 100V 5A TO39. Review the specifications below when checking this part for your BOM.
The JAN2N6193 is a PNP silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-39-3 package. The device features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. Power dissipation is rated at 1 W. The component operates within a temperature range of -65 °C to +200 °C. DC current gain ranges from a minimum of 40 to a maximum of 240. Collector-emitter saturation voltage is specified at 1.2 V, with an emitter-base voltage limit of 6 V.
Verify the specific revision level and lot traceability documentation upon receipt. Confirm that the TO-39-3 lead configuration matches the target PCB footprint. Ensure storage conditions prevent moisture ingress prior to soldering. Validate that the supplier provides full material declarations consistent with military procurement standards.
Select this component when high-temperature operation exceeding standard commercial limits is required. The 5 A current rating supports moderate power handling in compact through-hole layouts. Verify that the 100 V breakdown voltage aligns with the circuit's peak transient requirements. Consider the 1 W power dissipation limit relative to available heatsinking.
This part belongs to the JAN series of discrete semiconductors produced under strict military quality controls. The JAN2N6193 serves as a ruggedized alternative to commercial equivalents, offering enhanced radiation hardness and extended temperature tolerance. It is commonly utilized in defense and space applications where standard components may fail due to environmental stress.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same TO-39-3 pinout and electrical ratings.
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