Single Bipolar Transistors JANKCB2N5002 product image

JANKCB2N5002

$316.40
  • Description:TRANS NPN 80V 10A DIE
  • Series:-

SKU:5e2e468ae947 Category: Brand:

  
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JANKCB2N5002 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 10A DIE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANKCB2N5002

  • Description:TRANS NPN 80V 10A DIE
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 2.5A, 5V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:Military
  • Qualification:MIL-PRF-19500/534

Single Bipolar Transistors datasheet and documents for JANKCB2N5002

JANKCB2N5002

Single Bipolar Transistors Overview

The JANKCB2N5002 is an NPN bipolar junction transistor (BJT) die manufactured by Microchip Technology. It operates with a maximum collector-emitter voltage of 80 V and supports a maximum DC collector current of 5 A. The device features a minimum DC current gain (hFE) of 30 at 2.5 A and 5 V, with a collector-emitter saturation voltage of 1.5 V at 500 mA and 5 A. Designed for high-reliability environments, it belongs to the MIL-PRF-19500/534 military series.

Single Bipolar Transistors Feature Summary

  • High-performance NPN bipolar junction transistor die designed for demanding applications
  • Ensures efficient switching and amplification capabilities
  • Complies with MIL-PRF-19500/534 military series standards

Single Bipolar Transistors Applications

  • Military electronic systems
  • High-reliability power switching circuits
  • Amplification stages in ruggedized equipment

Single Bipolar Transistors Procurement Notes

Verify that the component is sourced as a bare die form factor, distinct from packaged transistors. Confirm compliance with the specified military series requirements. Ensure handling procedures account for the exposed die structure during assembly. Validate manufacturer documentation against the specific part number to avoid confusion with similar package types.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN BJT die is required for military-grade reliability. Consider its 80 V rating and 5 A current capacity for power management tasks. Evaluate thermal management strategies suitable for bare die mounting. Compare performance metrics such as hFE and saturation voltage against system requirements for optimal efficiency.

Single Bipolar Transistors Part Context

This component is part of Microchip Technology's portfolio of high-reliability semiconductor devices. It falls under the category of power BJTs intended for critical applications where standard commercial components are insufficient. The military series designation indicates adherence to strict quality and performance standards defined by relevant defense specifications.

JANKCB2N5002JANKCB2N5002
$316.40
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