JANS2N5415

Single Bipolar Transistors Overview

The JANS2N5415 is a military-grade PNP power bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in the TO-5-3 metal can package for through-hole mounting. The device supports a maximum collector-emitter voltage of 200 V and a continuous collector current of 1 A. It features a power dissipation rating of 1 W and operates within a junction temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Military-grade reliability with extended thermal stability up to 200°C
• High-voltage capability suitable for demanding power applications
• Robust metal can construction for harsh environment protection

Single Bipolar Transistors Applications

• Aerospace and defense electronic systems
• High-reliability power switching circuits
• Harsh environment amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation required for your program. Confirm that the TO-5-3 package dimensions match your board layout constraints. Ensure that the supplier provides necessary quality certifications and test reports compliant with military specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and extreme temperature operation are critical requirements. The TO-5-3 package offers superior thermal performance compared to plastic alternatives. Consider the 1 A current limit and 1 W power dissipation when designing heat management solutions for your specific circuit topology.

Single Bipolar Transistors Part Context

This part belongs to the 2N5415 family of PNP transistors produced by Microchip Technology. It serves as a ruggedized version designed for environments where standard commercial components would fail. The device complements other high-reliability discrete semiconductors in the manufacturer's aerospace portfolio.