JANSL2N3637UB/TR

Single Bipolar Transistors Overview

The JANSL2N3637UB/TR is a single PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for surface-mount applications, it utilizes an LCC-3 package configuration. The device supports a maximum continuous collector current of 1 A and withstands collector-emitter and collector-base voltages up to 175 V, with an emitter-base voltage rating of 5 V. It features a power dissipation capacity of 1 W and operates within a temperature range from -65 °C to +200 °C. The component exhibits a minimum DC current gain (hFE) of 55 at specified test conditions.

Single Bipolar Transistors Feature Summary

• Qualified under MIL-PRF-19500/357 standards for high-reliability environments
• Utilizes hermetic ceramic packaging for enhanced environmental stability
• Supports extended operating temperatures up to +200 °C

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• High-reliability industrial control circuits
• Harsh environment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'SL' against the latest Microchip datasheet to confirm exact qualification level and testing requirements. Confirm package integrity and pinout compatibility before integration. Ensure supply chain authorization due to restricted availability status. Validate RoHS exemption status if required by final assembly specifications.

Single Bipolar Transistors Selection Notes

Select this component when MIL-PRF-19500/357 qualification is mandatory for the application. The LCC-3 surface-mount form factor suits automated assembly processes requiring compact footprints. Consider the 175 V breakdown voltage for high-side switching or amplifier stages. Verify thermal management capabilities given the 1 W dissipation limit in enclosed spaces.

Single Bipolar Transistors Part Context

This part belongs to the 2N3637 family of PNP silicon transistors produced by Microchip/Microsemi. The JAN prefix indicates military-grade screening, while the SL suffix typically denotes specific reliability enhancements or lot traceability distinct from standard commercial variants. It serves as a ruggedized alternative to general-purpose discrete transistors in critical infrastructure.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JAN2N3637UB/TR and JANTXV2N3637UB. Verify pinout and electrical parameters match exactly. Package differences between LCC-3 and TO-5 require mechanical adaptation.