JANSM2N3439L

Single Bipolar Transistors Overview

The JANSM2N3439L is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for high-voltage applications, this component features a collector-emitter voltage rating of 350V and a continuous collector current capacity of 1A. The device dissipates up to 800mW of power and is housed in a surface-mount package. It belongs to the RH Power BJT sub-category within the broader class of bipolar transistors.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 350V collector-emitter breakdown rating suitable for demanding power switching environments.
• Surface-mount construction designed for automated assembly processes and compact circuit board layouts.
• Silicon-based semiconductor technology providing stable performance characteristics for general-purpose power applications.

Single Bipolar Transistors Applications

• High-voltage power switching circuits
• General-purpose amplifier stages requiring elevated voltage tolerance
• Power management systems utilizing surface-mount topology

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against the official Microchip datasheet to ensure compatibility with required radiation hardness or military specifications. Confirm that the ordering information matches the exact electrical parameters needed for the target design. Cross-reference the manufacturer's latest product change notifications to account for any recent manufacturing updates or material changes that may affect integration.

Single Bipolar Transistors Selection Notes

Select this component when the design requires a robust NPN transistor capable of handling 350V potentials in a surface-mount form factor. Ensure the thermal management strategy accommodates the 800mW power dissipation limit under maximum load conditions. Compare against through-hole alternatives if higher current ratings or different mounting constraints are present in the system architecture.

Single Bipolar Transistors Part Context

This part is part of Microchip's portfolio of discrete semiconductors, specifically within the bipolar junction transistor category. It shares core electrical specifications with other variants in the 2N3439 series but differs in packaging and potential qualification levels. The JAN prefix typically indicates a specific quality or screening level defined by the manufacturer for specialized electronic components.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JANTX2N3439P and JANTXV2N3439U4, which share identical 350V/1A ratings. Verify pinout compatibility and package dimensions before substitution to ensure mechanical fit within the existing footprint.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the JANSM2N3439L?

The maximum collector-emitter voltage rating is 350V.

Is the JANSM2N3439L available in a through-hole package?

No, the JANSM2N3439L variant is specified as a surface-mount device (SMD/SMT).

What type of semiconductor technology is used in this transistor?

The JANSM2N3439L utilizes silicon (Si) technology.