JANSP2N2369AUB

Single Bipolar Transistors Overview

The JANSP2N2369AUB is a single NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and features a TO-18-3 ceramic hermetic package designed for through-hole mounting. The device supports a maximum DC collector current of 200 mA and a power dissipation of 680 mW. Key electrical ratings include a collector-emitter voltage (VCEO) of 20 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 4.5 V. The component operates within a temperature range of -65°C to +200°C and is qualified for military grade applications.

Single Bipolar Transistors Feature Summary

• Military-grade qualification ensuring reliability in harsh environments
• Hermetically sealed ceramic construction for environmental protection
• High thermal stability with extended operating temperature range

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• High-reliability communication equipment
• Harsh environment signal processing circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against the official Microchip datasheet to ensure compatibility with required military specifications. Confirm that the hermetic seal integrity meets project standards. Check for any recent Product Change Notifications regarding material or process updates. Ensure the procurement channel provides valid traceability documentation for defense or aerospace compliance requirements.

Single Bipolar Transistors Selection Notes

Select this component when high-reliability NPN switching or amplification is required in extreme conditions. The TO-18 package suits legacy or specialized through-hole designs. Consider the 200 mA current limit and 680 mW power dissipation for circuit design. Compare against standard commercial variants if military qualification is not mandatory for the application.

Single Bipolar Transistors Part Context

This part belongs to the 2N2369 series of small-signal transistors. It shares the core electrical characteristics of the commercial 2N2369AU but includes enhanced manufacturing controls for military use. The JAN prefix indicates a specific level of screening and quality assurance distinct from commercial equivalents.

Single Bipolar Transistors Replacement Considerations

• JANSH2N2369AUB

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 20 V.

Is this component suitable for high-temperature operation?

Yes, it is rated for a maximum operating temperature of +200°C.