Single Bipolar Transistors JANTXV2N3700 product image

JANTXV2N3700

$4.45
  • Description:TRANS NPN 80V 1A TO-18
  • Series:-

SKU:9e6b18bec421 Category: Brand:

  
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JANTXV2N3700 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 1A TO-18. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N3700

  • Description:TRANS NPN 80V 1A TO-18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/391

Single Bipolar Transistors datasheet and documents for JANTXV2N3700

JANTXV2N3700

Single Bipolar Transistors Overview

The JANTXV2N3700 is a silicon NPN single bipolar junction transistor housed in a TO-18-3 hermetic package. It supports through-hole mounting and operates within a temperature range of -65°C to +200°C. Key electrical ratings include a maximum collector current of 1 A, a collector-emitter voltage (VCEO) of 80 V, and a collector-base voltage (VCBO) of 140 V. The device features a power dissipation capacity of 1 W at 25°C, with an emitter-base voltage (VEBO) of 7 V and a collector-emitter saturation voltage of 500 mV. DC current gain ranges from a minimum of 15 to a maximum of 300.

Single Bipolar Transistors Feature Summary

  • Hermetically sealed construction for environmental protection
  • Qualified under the JAN specification system
  • High thermal stability suitable for extreme temperatures

Single Bipolar Transistors Applications

  • Aerospace electronic systems
  • Radiation-hardened circuit designs
  • Military-grade signal processing

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required qualification level, as variations exist between standard and high-reliability versions. Confirm compliance with MIL-PRF-19500 standards during acquisition. Ensure the component meets the necessary radiation hardness requirements for the intended deployment environment before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when hermetic sealing and strict military qualification are mandatory. It serves as a specialized alternative to commercial equivalents like the 2N3700, offering superior reliability in harsh conditions. Consider the higher cost associated with JAN qualification and hermetic packaging when evaluating design budgets.

Single Bipolar Transistors Part Context

This part belongs to the 2N3700 family of NPN silicon transistors manufactured by Microchip Technology. While sharing core electrical characteristics with commercial variants, it adheres to rigorous defense specifications. The product line includes various qualification levels, such as JANTX and JANS, catering to different reliability tiers in critical applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2N3700HR.

JANTXV2N3700JANTXV2N3700
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