KSC5502DTTU

Single Bipolar Transistors Overview

The KSC5502DTTU is an NPN triple diffused planar silicon transistor manufactured by onsemi. It features a collector-emitter voltage of 600 V and a collector-base voltage of 1200 V, with a continuous DC collector current rating of 2 A. The device operates within a junction temperature range up to 150 °C and offers a power dissipation capacity of 118.16 W in its TO-220 package. Key electrical characteristics include a minimum DC current gain (hFE) of 14 at IC = 1 A and a typical current gain bandwidth product (fT) of 11 MHz.

Single Bipolar Transistors Feature Summary

• High voltage power switching capability
• Wide safe operating area
• Built-in free-wheeling diode

Single Bipolar Transistors Applications

• Electronic ballast applications
• High voltage power switch circuits
• Switching applications requiring wide SOA

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TTU' against official documentation to confirm the rail packing method for the TO-220 package. Ensure compatibility with the updated nomenclature following the Fairchild Semiconductor integration into ON Semiconductor. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage blocking capabilities combined with moderate current handling. The built-in free-wheeling diode simplifies circuit topology for inductive loads. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the required switching speeds align with the device's storage time and fall time parameters for the target application frequency.

Single Bipolar Transistors Part Context

This part belongs to the KSC5502D series of NPN transistors. It is available in two package options: D-PAK and TO-220. The KSC5502DTTU specifically denotes the TO-220 variant. The series is designed for robust performance in high-voltage environments, leveraging triple diffused planar silicon technology for improved reliability and consistent electrical characteristics across operating temperatures.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify that any substitute maintains the 600 V VCEO rating and 2 A IC capability. Ensure the replacement package matches the thermal and mechanical constraints of the existing design.