KSD1362RTU

Single Bipolar Transistors Overview

The KSD1362RTU is an NPN epitaxial silicon transistor designed for high-power applications. It features a collector-base voltage of 150 V, a collector-emitter voltage of 70 V, and a maximum collector current of 5 A. The device supports a collector dissipation of 20 W at 25°C case temperature. Key electrical characteristics include a DC current gain ranging from 20 to 140 depending on the classification, a collector cut-off current of 20 µA, and a current gain bandwidth product of 10 MHz. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 150 V collector-base breakdown
• Robust current handling with 5 A continuous collector current
• Optimized for horizontal deflection output stages in B/W TV systems

Single Bipolar Transistors Applications

• Black and white television horizontal deflection output circuits
• General-purpose power switching applications
• Linear regulator output stages

Single Bipolar Transistors Procurement Notes

Verify the component status as this datasheet indicates Fairchild Semiconductor reserves the right to make changes without notice. Confirm that the TO-220F package dimensions match your PCB footprint requirements. Ensure thermal management solutions support the 20 W dissipation rating at the expected case temperature. Check for RoHS compliance if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and moderate current switching are required. The 150 V collector-base rating provides safety margin over standard 70 V supply rails. Consider the hFE classification (N, R, or O) based on the specific base drive requirements of your circuit design to ensure adequate saturation or amplification performance.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN epitaxial silicon transistors manufactured by Fairchild Semiconductor. It is specifically engineered for use in consumer electronics, particularly television sets. The TO-220F package facilitates mounting on heat sinks for effective thermal management during high-power operation.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for direct replacements. Verify that any substitute maintains the 150 V CBO, 70 V CEO, and 5 A IC ratings. Ensure the replacement package matches the TO-220F pinout and physical dimensions.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 70 V.

What is the DC current gain range?

The DC current gain (hFE) ranges from 20 to 140, categorized into classes N, R, and O.

Is this component suitable for life support devices?

No, Fairchild Semiconductor products are not authorized for use as critical components in life support devices without express written approval.