KSD363OTU

Single Bipolar Transistors Overview

The KSD363OTU is an NPN epitaxial planar silicon power transistor manufactured by onsemi, designed for high-power switching applications. It utilizes a TO-220AB through-hole package to facilitate efficient thermal management. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120 V and a maximum collector-base voltage (VCBO) of 300 V. The device supports a continuous collector current of 6 A with a power dissipation rating of 40 W at 25°C case temperature. It features a minimum DC current gain (hFE) of 120 and operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• High power handling capability with 40 W dissipation in a robust TO-220AB package
• High voltage tolerance suitable for demanding switching environments
• Enhanced thermal performance via direct mounting to heatsinks

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Audio amplifier output stages
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'OTU' against official datasheets to confirm pinout orientation and packaging variations. Confirm RoHS compliance status as manufacturing processes may evolve. Check for End-of-Life (EOL) notices or lifecycle changes directly from onsemi documentation before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when high current capacity and moderate voltage ratings are required in a standard through-hole format. Ensure adequate heatsinking is provided to maintain junction temperatures within safe limits during operation. Compare hFE ranges and saturation voltages against circuit requirements to ensure proper drive conditions are met.

Single Bipolar Transistors Part Context

This part belongs to the KSD363 series of power transistors from onsemi. These devices are engineered for general-purpose power amplification and switching tasks. The series offers a balance of voltage and current handling capabilities, making them suitable for various industrial and consumer electronics applications requiring reliable performance.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Common alternatives may include other NPN power transistors with similar TO-220 packages and comparable VCEO/IC ratings, such as those from the 2N3055 family or equivalent onsemi parts like the MJE3055T, subject to pinout compatibility.