KSD560RTU

Single Bipolar Transistors Overview

The KSD560RTU is an NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. The device provides high DC current gain, ranging from 2000 to 15000 depending on the classification bin. It is housed in a TO-220 package with a maximum power dissipation of 30 W at a case temperature of 25°C. The component supports a junction temperature up to 150°C and includes built-in protection characteristics suitable for industrial applications.

Single Bipolar Transistors Feature Summary

• High DC current gain optimized for low-frequency power amplification
• Integrated internal circuitry designed for low-speed switching operations
• Robust thermal performance allowing significant power dissipation under controlled cooling conditions

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits
• Low speed switching industrial use
• Complementary pairing with PNP transistors such as the KSB601

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification bin required for the application, as gain varies significantly between R, O, and Y designations. Confirm that the TO-220 mounting configuration aligns with the thermal management strategy, as power ratings depend heavily on case temperature. Ensure compliance with the manufacturer's life support policy restrictions before deployment in critical systems.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and moderate voltage handling are required for non-critical industrial tasks. Consider the complementary KSB601 if a matched pair topology is necessary. Evaluate the thermal resistance requirements carefully, as the rated power dissipation assumes a specific case temperature environment rather than free air convection alone.

Single Bipolar Transistors Part Context

This part belongs to the NPN epitaxial silicon Darlington transistor family originally developed by Fairchild Semiconductor and now managed by onsemi following corporate integration. The KSD560 serves as a standard solution for general-purpose high-gain amplification and switching duties where moderate speed is acceptable.

Single Bipolar Transistors Replacement Considerations

The KSB601 is documented as the direct complementary counterpart. Verify pinout compatibility and electrical symmetry when substituting or pairing components in existing circuit designs.