KSD568RTU

Single Bipolar Transistors Overview

The KSD568RTU is an NPN epitaxial silicon transistor in a TO-220 package. It features a collector-emitter voltage of 60 V and a continuous collector current rating of 7 A. The device supports a pulse collector current of 15 A and offers a maximum power dissipation of 40 W at a case temperature of 25°C. Key electrical parameters include a DC current gain ranging from 40 to 200 depending on the sub-class, a collector-emitter saturation voltage of 0.5 V max at 5 A, and a base-emitter saturation voltage of 1.5 V max under identical conditions.

Single Bipolar Transistors Feature Summary

• High current handling capability with a 7 A continuous collector current rating
• Low saturation voltages for efficient switching performance
• Robust thermal management with 40 W power dissipation capacity at 25°C case temperature
• Complementary design pairing available with the KSB707/708 PNP transistors

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits
• Industrial low-speed switching applications
• General purpose power transistor stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (R, O, or Y) required for your circuit design, as gain varies significantly between classifications. Confirm the suffix RTU corresponds to the intended tape-and-reel packaging format if automated assembly is planned. Ensure the sourcing channel provides original Fairchild Semiconductor documentation to validate authenticity and revision status.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN switch is needed with moderate voltage ratings. Compare the KSD568 against the KSD569 if higher voltage tolerance is required, noting the 60 V versus 80 V collector-emitter breakdown difference. Evaluate thermal constraints carefully, as power dissipation drops sharply above 25°C case temperature according to the derating curve.

Single Bipolar Transistors Part Context

This part belongs to the KSD568/569 series manufactured by Fairchild Semiconductor. It serves as the NPN counterpart to the KSB707/708 PNP transistors, forming complementary pairs for push-pull configurations. The device is designed for robust industrial use cases requiring reliable power switching and amplification capabilities within standard through-hole mounting constraints.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes may include other NPN power transistors with similar 60V/7A ratings and TO-220 packaging. Verify pinout compatibility and thermal resistance values before substitution. Check datasheets for equivalent hFE ranges and saturation characteristics to ensure circuit performance remains within specifications.