Single Bipolar Transistors KSE800STU product image

KSE800STU

$1.34
  • Description:TRANS NPN DARL 60V 4A TO-126-3
  • Series:-

SKU:678248fec099 Category: Brand:

  
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KSE800STU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 60V 4A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSE800STU

  • Description:TRANS NPN DARL 60V 4A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3

Single Bipolar Transistors datasheet and documents for KSE800STU

KSE800STU

Single Bipolar Transistors Overview

The KSE800STU is an NPN silicon epitaxial planar Darlington transistor manufactured by onsemi. It is housed in a TO-126 through-hole package designed for high-current switching applications. Key electrical ratings include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 4 A with a minimum DC current gain (hFE) of 750. It operates within a temperature range of -55°C to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

  • High current gain capability suitable for direct drive applications
  • Epitaxial planar construction for reliable switching performance
  • Through-hole mounting configuration for robust mechanical stability

Single Bipolar Transistors Applications

  • High-power audio amplifier output stages
  • Industrial motor control circuits
  • Power supply regulation systems

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before integration. Confirm that the TO-126 package thermal characteristics meet your heat dissipation requirements. Ensure the 60 V voltage rating provides sufficient margin for your circuit's peak operating conditions. Check for any recent product change notices affecting pinout or material composition.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN Darlington transistor is required to handle up to 4 A of continuous current. The high hFE minimizes base drive current requirements compared to standard bipolar transistors. Consider the TO-126 package size for board space constraints. Verify that the 60 V breakdown voltage aligns with the system's power rail specifications to prevent premature failure under transient loads.

Single Bipolar Transistors Part Context

This part belongs to the MJE800 series of power Darlington transistors from onsemi. The series is engineered for general-purpose high-current switching tasks. The KSE800STU variant specifically denotes the TO-126 plastic encapsulation style. It shares functional similarities with other members of the family but differs in physical packaging and thermal handling capabilities.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for validated cross-reference options if this component is obsolete or unavailable.

KSE800STUKSE800STU
$1.34
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