LXP1000-23-2

RF Diode Overview

The LXP1000-23-2 is a silicon PIN diode from Microchip Technology, packaged in a non-hermetic EPSM SMT format within an SOT-23-3 (TO-236-3) housing. It features one pair of series-connected diodes with a maximum peak reverse voltage of 5V and a maximum forward current of 5 mA. The device dissipates up to 250 mW and operates between -55°C and 125°C. Key electrical characteristics include a capacitance of 0.28 pF at 5V reverse bias and 1 MHz frequency, and a resistance of 2.5 ohms at 5 mA forward current and 100 MHz frequency.

RF Diode Feature Summary

• Utilizes a silicon PIN structure for RF switching applications
• Non-hermetic plastic surface-mount construction
• Series-connected diode pair configuration

RF Diode Applications

• RF signal switching
• Attenuator circuits
• Phase shifting networks

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and material specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process.

RF Diode Selection Notes

Select this component when a low-capacitance RF switch is required in a compact SOT-23 package. Ensure the circuit design accommodates the 5V peak reverse voltage limit and 250 mW power dissipation constraints under expected operating conditions.

RF Diode Part Context

This part belongs to the LXP1000 series of RF PIN diodes manufactured by Microchip Technology. It is designed for high-frequency applications requiring small form factors and reliable switching performance in telecommunications and radar systems.

RF Diode Replacement Considerations

Consult the official Microchip LXP1000-LXP1011 datasheet for verified cross-reference information or direct substitute part numbers that match the electrical and mechanical specifications.