MA4L032-1056

RF Diode Overview

The MA4L032-1056 is a gold-doped silicon PIN limiter diode from the MA4L series, packaged in the ODS-1056 surface mount configuration. It features a breakdown voltage of 30V minimum and 50V maximum at 10 µA. Junction capacitance is typically 0.12 pF at 10 V reverse bias (max 0.18 pF) and 0.20 pF at 0 V (max 0.20 pF). Series resistance is 2.50 Ω at 10 mA forward current and 500 MHz. The device has a carrier lifetime of 15 ns with an I-region thickness of 3 µm (1.5 mils). Nominal high signal performance at 9.4 GHz includes a recovery time of 34 ns, 44 dBm incident peak power limiting, and 4 dB CW input power.

RF Diode Feature Summary

• Gold-doped silicon construction for optimized fast signal response and recovery times
• Designed for low insertion loss at zero bias and low flat leakage power
• Utilizes silicon nitride passivation for proven reliability
• Available in ODS-1056 ceramic surface mount package with wrap-around contacts

RF Diode Applications

• Passive limiter control circuits to protect sensitive receiver components
• Protection for low noise amplifiers (LNA), detectors, and mixers
• High signal applications covering the 10 MHz to 18 GHz frequency range

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm the ODS-1056 package style. Ensure that the base part number MA4L032 corresponds to the required gold-doped die characteristics. Confirm RoHS compliance status through the latest product documentation before procurement.

RF Diode Selection Notes

Select this component when a balance between moderate breakdown voltage and fast recovery time is required. The gold doping provides lower recovery time compared to non-gold variants. Consider the 2.50 Ω series resistance and 0.20 pF junction capacitance for impedance matching in shunt configurations within the specified frequency range.

RF Diode Part Context

This device belongs to the MACOM MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices are engineered for small and medium I-region lengths to handle high signal applications. The series offers various package options including discrete dies and assembled surface mount packages like the ODS-1056.

RF Diode Replacement Considerations

MA4L032-134 (Chip)

RF Diode FAQ

What is the difference between the gold-doped and non-gold-doped versions of the MA4L032?

Gold-doped devices, such as the MA4L032, are designed for lower recovery time. Non-gold doped devices are available for applications requiring lower flat leakage.

How is the series resistance (RS) defined for this component?

Maximum series resistance is measured at 500 MHz and represents the total diode resistance, calculated as the sum of chip junction resistance and package ohmic resistance.

What is the recommended mounting temperature limit?

The absolute maximum mounting temperature is +320°C for a duration of 10 seconds.