MADP-030015-13140P

RF Diode Overview

The MADP-030015-13140P is a silicon PIN diode from the SURMOUNT family, utilizing MACOM's HMIC process. It features a 15 µm intrinsic region and an ODS-1314 surface mount package with a 0603 outline. Key electrical specifications include a maximum reverse voltage of 115 V, a typical capacitance of 0.78 pF at -40 V and 1 GHz, and a series resistance ranging from 0.38 to 0.49 Ω at +70 mA and 1 GHz. The device supports a forward current of 500 mA, operates between -55°C and +125°C, and has a thermal resistance of 13 °C/W.

RF Diode Feature Summary

• Vertical topology with embedded silicon pedestals in low-loss glass for exceptional heat transfer
• Encapsulated with silicon nitride and polymer layers for scratch and impact protection
• Low parasitic inductance and excellent RC constant suitable for high-frequency switching

RF Diode Applications

• Higher frequency switch elements
• Moderate incident power applications up to 50 dBm CW
• Peak power handling up to 75 dBm with pulse widths ≤ 1 µs

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The 'P' suffix indicates a reel packaging format containing 3000 pieces. Confirm that the required quantity aligns with the factory packaging unit to avoid partial reel issues or unnecessary inventory holding costs during the purchasing phase.

RF Diode Selection Notes

Select this component when a low parasitic inductance design is critical for RF performance. The 15 µm I-region length provides a balance between capacitance and carrier lifetime. Ensure the application environment stays within the specified operating temperature range and that the mounting substrate allows for effective thermal dissipation given the 13 °C/W thermal resistance rating.

RF Diode Part Context

This part belongs to the MAPD-017015 & MAPD-030015 SURMOUNT family. It shares identical physical dimensions with the MADP-017015-1314 variant but differs in electrical characteristics due to the specific doping profile associated with the 30015 designation. Both devices utilize the same ODS-1314 case style and HMIC fabrication technology.

RF Diode Replacement Considerations

The MADP-017015-13140P is a related variant within the same datasheet. While it shares the same package and mechanical outline, its electrical parameters such as capacitance and series resistance differ. Verify if the specific impedance matching requirements of the circuit can accommodate the lower capacitance values of the 017015 model before substitution.

RF Diode FAQ

How is the backside contact achieved on this device?

Connections to the backside are facilitated by making the pedestal sidewalls electrically conductive, with selective backside metallization applied to produce the surface mount device.

What is the recommended soldering method for hard substrates?

For hard substrates, hot gas die bonding is preferred. A vacuum tip pick-up tool and a downward force of 60 to 100 grams should be applied while applying heat near the circuit trace and diode mounting pad.

What protective coatings are used on the topside?

The topside is fully encapsulated with silicon nitride and includes an additional polymer layer designed to provide scratch and impact protection for the junction and anode air-bridge.