MBR12035CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR12035CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 120 A per package. It features a Twin Tower package with electrically isolated base plates, providing high surge capability and non-ESD sensitivity. The device operates within a junction temperature range of -55 °C to 150 °C, with a maximum thermal resistance of 0.80 °C/W per leg.

Diode Arrays Feature Summary

• High surge current capability
• Electrically isolated base plate design
• Not ESD sensitive

Diode Arrays Applications

• Power rectification in industrial equipment
• DC-DC converter freewheeling applications
• Uninterruptible power supply (UPS) systems

Diode Arrays Procurement Notes

Verify the specific part number against official datasheets to confirm terminal configuration and electrical ratings. Ensure compatibility with existing thermal management solutions, as the component requires proper heat sinking to maintain performance within the specified operating temperature range.

Diode Arrays Selection Notes

Select this component for applications requiring robust Schottky rectification with high surge tolerance. Consider the Twin Tower package for efficient mounting and thermal dissipation. Verify that the 35 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This module belongs to the MBR120 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 40 V, all sharing a common 120 A current rating and Twin Tower packaging format designed for high-reliability power electronics applications.

Diode Arrays Replacement Considerations

Compatible substitutes include other MBR120 series variants such as MBR12030CTR or MBR12040CTR, provided the voltage ratings meet the circuit requirements. Cross-reference with equivalent modules from other manufacturers ensuring identical current, voltage, and thermal specifications.

Diode Arrays FAQ

What is the maximum forward surge current for the MBR12035CTR?

The maximum forward surge current is 800 A for an 8.3 ms half-sine wave pulse.

Is the MBR12035CTR sensitive to electrostatic discharge?

No, the device is explicitly noted as not being ESD sensitive.

What is the thermal resistance of the MBR12035CTR?

The thermal resistance from junction to case is 0.80 °C/W per leg.