Single FETs, MOSFETs MCPF07N65-BP product image

MCPF07N65-BP

$0.99
  • Description:MOSFET N-CH 650V 7A TO220F
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tube

SKU:c054ddc5dda0 Category: Brand:

  
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MCPF07N65-BP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N-CH 650V 7A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MCPF07N65-BP

  • Description:MOSFET N-CH 650V 7A TO220F
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for MCPF07N65-BP

MCPF07N65-BP

Single FETs, MOSFETs Overview

The MCPF07N65-BP is an N-channel enhancement mode power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes silicon technology and is housed in a TO-220F-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage of 650 V, a continuous drain current of 7 A, and a maximum on-resistance of 1.4 Ohms at 10 V gate drive. The device features a gate-source voltage range of ±30 V, a threshold voltage of 2.5 V, and a total gate charge of 26 nC. It supports a power dissipation of 73 W and operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 650 V drain-source breakdown rating for robust operation in demanding environments.
  • Integrated thermal design via the TO-220F-3 package facilitates efficient heat dissipation without requiring separate insulators.
  • Low gate charge characteristics enable faster switching speeds and reduced driver power requirements.

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converter circuits
  • Isolated power supply topologies
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official MCC documentation due to discontinued status. Confirm package integrity as the TO-220F-3 variant requires specific mounting considerations compared to standard TO-220 packages. Ensure replacement sourcing aligns with original electrical parameters to maintain system reliability.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and through-hole mounting are required. The TO-220F-3 package eliminates the need for external thermal pads. Compare on-resistance and gate charge against alternative N-channel MOSFETs to ensure compatibility with existing gate drive circuits and thermal management strategies.

Single FETs, MOSFETs Part Context

This part belongs to the MCP series of N-channel power MOSFETs from Micro Commercial Components. It shares the 650 V voltage class with other variants like MCP07N65-BP but differs in packaging. The TO-220F-3 configuration provides integrated insulation for direct heatsink mounting, distinguishing it from non-insulated counterparts in the same product family.

Single FETs, MOSFETs FAQ

What is the primary advantage of the TO-220F-3 package over standard TO-220?

The TO-220F-3 package includes an integrated insulating layer, allowing the metal tab to be mounted directly to a heatsink without requiring additional thermal insulators or gaskets.

Is the MCPF07N65-BP suitable for linear mode operation?

While technically possible, operation in the linear region requires careful consideration of safe operating area (SOA) limits to prevent thermal runaway, as with most power MOSFETs.

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