MJD200G

$0.85

Description：TRANS NPN 25V 5A DPAK
Series：-

SKU:d19e7b792b57 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJD200G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 5A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD200G

Description：TRANS NPN 25V 5A DPAK
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 1A, 5A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 2A, 1V
Power - Max：1.4 W
Frequency - Transition：65MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJD200G

MJD200G

Single Bipolar Transistors Overview

The MJD200G is an NPN silicon power transistor in a DPAK (TO-252) surface-mount package. It features a maximum collector current of 5 A, a collector-emitter voltage of 25 V, and a total power dissipation of 12.5 W at 25°C case temperature. The device offers a high DC current gain ranging from 70 to 180 and a current-gain-bandwidth product of 65 MHz. Operating junction temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

Designed for low-voltage, low-power, high-gain audio amplifier applications
Annular construction provides low leakage characteristics
Lead formed specifically for surface mount applications
Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

Low voltage audio amplifiers
Low power switching circuits
High gain linear applications

Single Bipolar Transistors Procurement Notes

Verify component status before design finalization as the MJD200G has been marked as discontinued in recent documentation revisions. Confirm availability through authorized distributors or explore alternative active devices within the complementary MJD200/MJD210 series if long-term supply continuity is required for production.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate current handling with low saturation voltage in a compact surface-mount footprint. Ensure thermal management strategies account for the specified derating curves above 25°C case temperature. Verify that the 25 V collector-emitter voltage rating aligns with the specific circuit operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the MJD200 complementary plastic power transistor family manufactured by onsemi. It serves as the NPN counterpart to the MJD210 PNP transistor. Both devices share similar electrical characteristics and are intended for use in push-pull configurations within audio and general-purpose power switching applications.