MJD200T4

Single Bipolar Transistors Overview

The MJD200T4G is an NPN silicon power transistor in a DPAK surface-mount package. It features a maximum collector-emitter voltage of 25 Vdc and continuous collector current of 5.0 Adc. Peak collector current reaches 10 Adc with total power dissipation of 12.5 W at 25°C case temperature. The device offers high DC current gain (minimum 70 at 500 mA) and a current-gain-bandwidth product of 65 MHz. Operating junction temperature ranges from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for low voltage, low-power, high-gain audio amplifier applications
• Annular construction provides low leakage characteristics
• Lead formed specifically for surface mount applications in plastic sleeves
• Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• Low voltage audio amplifier circuits
• Low-power switching applications
• High-gain amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when purchasing. The provided model lacks the mandatory 'G' suffix required for Pb-Free compliance in official documentation. Confirm whether the intended procurement requires the standard tape-and-reel packaging associated with the MJD200T4G designation or alternative bulk options like the MJD200RLG variant to ensure compatibility with manufacturing processes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high DC current gain and low saturation voltage in surface-mount layouts. Ensure thermal management accounts for the 89.3 °C/W junction-to-ambient resistance when operating without adequate heatsinking. Verify that the 25 V collector-emitter voltage rating aligns with the circuit's peak operational requirements to prevent breakdown.

Single Bipolar Transistors Part Context

This device belongs to the complementary MJD200/MJD210 series of plastic power transistors manufactured by onsemi. It serves as the NPN counterpart to the PNP MJD210, designed for matched performance in push-pull configurations. The series utilizes DPAK packaging optimized for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

MJD200T4G

Single Bipolar Transistors FAQ

What is the pin configuration for the MJD200?

Pin 1 is Base, Pin 2 is Collector, Pin 3 is Emitter, and Pin 4 is Collector.

Is the MJD200 suitable for automotive applications?

Standard MJD200 devices are not specified for automotive use; the NJV prefix variants are AEC-Q101 qualified and PPAP capable for such requirements.

How does the power dissipation change with temperature?

Power dissipation must be derated above 25°C at a rate of 0.1 W/°C for case-mounted operation.